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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / 2N7002E-T1-GE3

2N7002E-T1-GE3 - SMD N channel transistors

2N7002E-T1-GE3
Description

Transistor: N-MOSFET; unipolar; 60V; 0.24A; Idm: 1.3A; 0.22W; SOT23

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 60V
Drain current 0.24A
Pulsed drain current 1.3A
Power dissipation 0.22W
Case SOT23
Gate-source voltage ±20V
On-state resistance 3Ω
Mounting SMD
Gate charge 0.6nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat