2N7000TA - THT N channel transistors

2N7000TA
Description

Transistor: N-MOSFET; unipolar; 60V; 110mA; Idm: 1A; 0.4W; TO92

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Technology DMOS
Polarisation unipolar
Drain-source voltage 60V
Drain current 0.11A
Pulsed drain current 1A
Power dissipation 0.4W
Case TO92
Gate-source voltage ±30V
On-state resistance
Mounting THT
Kind of package Ammo Pack
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat